DocumentCode
3020415
Title
Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study
Author
Zhao, Zhiya ; Lantz, Kevin R. ; Yi, Changhyun ; Stiff-Roberts, Adrienne D.
Author_Institution
Duke Univ., Durham
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; impurity absorption spectra; impurity states; indium compounds; infrared detectors; photodetectors; semiconductor doping; semiconductor quantum dots; InAs-GaAs; capacitance-voltage spectroscopy; carrier occupation; carrier transport; dopants; doping effect; energy level occupation; impurity centers; quantum dot infrared photodetectors; Capacitance-voltage characteristics; Doping; Energy states; Gallium arsenide; Impurities; Infrared detectors; Infrared spectra; Photodetectors; Quantum dots; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453433
Filename
4453433
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