Electron injection from n-type Si substrates into (i) Transition metal high-k dielectrics and (ii) SiO2 and Si oxynitride alloys: Conduction band edge states and negative ion state electron trap differences

Author

Lucovsky, G. ; Zeller, D. ; Wu, K. ; Kim, J.

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO₂ and Si oxynitride alloys. Differences between electron injection into, and trapping ay O-vacancy states in SiO₂ and TM oxides are correlated with differences in wave function symmetries of conduction band edge electronic states.

Keywords

MIS devices; conduction bands; electron traps; hafnium compounds; high-k dielectric thin films; lutetium compounds; nanostructured materials; negative ions; silicon compounds; titanium compounds; vacancies (crystal); wave functions; HfO₂; Lu₂O₃; MOS device; Si; SiO₃; SiON; TiO₂; bonding defects; conduction band edge states; electron injection; metal-oxide-semiconductor device; n-type silicon substrates; nanocrystalline transition metal; negative ion state electron trap difference; noncrystalline oxynitride alloys; oxygen atom vacancies; transition metal high-k dielectrics; wave function symmetry; Dielectrics; Electron traps; Metals; Photonic band gap; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757999

Filename

5757999