Modeling and performance of a one stage InP/GaInAs optoelectronic HBT 3-terminal mixer

Author

Betser, Y. ; Ritter, D. ; Liu, C.P. ; Seeds, A.J. ; Madjar, A.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1997

fDate

11-15 May 1997

Firstpage

380

Lastpage

383

Abstract

A high conversion gain 3-terminal heterojunction photo transistor optoelectronic mixer was demonstrated. The maximum obtained internal mixing efficiency was 11.3 dB. The mixing performance was measured as a function of the DC bias of the device and local oscillator power level. A SPICE based large signal model was employed to simulate the device. The main non-linear effects which contribute to the mixing process were the bias dependence of the dynamic emitter resistance, and the transition from the active to the saturation mode

Keywords

III-V semiconductors; SPICE; bipolar integrated circuits; gallium arsenide; indium compounds; integrated circuit modelling; integrated optoelectronics; mixers (circuits); optical communication equipment; phototransistors; subcarrier multiplexing; DC bias; InP-GaInAs; SPICE based large signal model; active to saturation mode transition; device simulation; dynamic emitter resistance; high conversion gain 3-terminal heterojunction photo transistor optoelectronic mixer; internal mixing efficiency; local oscillator power level; mixing performance; nonlinear effects; one stage InP/GaInAs optoelectronic HBT 3-terminal mixer; optical subcarrier multiplexing; Distributed feedback devices; Heterojunction bipolar transistors; Indium phosphide; Local oscillators; Nonlinear optics; Optical mixing; Optical modulation; Power system modeling; SPICE; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600165

Filename

600165