Trial manufacture of 26 GHz band solid state power amplifier (SSPA) module

Author

Yajima, M. ; Hisada, Y. ; Ishida, Y. ; Saito, Y. ; Yamamoto, K. ; Murakami, S. ; Tanaka, S. ; Goto, N. ; Honjo, K.

Author_Institution

Office of Res. & Dev., Nat. Space Dev. Agency of Japan, Tokyo, Japan

fYear

1996

fDate

25-26 Nov 1996

Firstpage

172

Lastpage

175

Abstract

In this paper, we describe the results of trial manufacture of 26 GHz band Solid State Power Amplifier (SSPA) Module. This Module is composed of two common-base (CB) HBT (Heterojunction Bipolar Transistor) chips whose f_max is over 200 GHz with high power density by using selective regrowth of base contact layer. It has achieved output power of 3.2 W (35.1 dBm), power-added efficiency (PAE) of 13.:3%. Its gain is 4.7 dB because of unbalance between cells, so PAE is small, but high output power, PAE and gain can be achieved by using better balanced HBT chips which NEC has developing

Keywords

bipolar transistor circuits; heterojunction bipolar transistors; microwave power amplifiers; 13.3 percent; 26 GHz; 3.2 W; 4.7 dB; SSPA module; base contact layer; common-base HBT chip; gain; manufacture; output power; power-added efficiency; selective regrowth; solid state power amplifier; Energy consumption; Frequency; Heterojunction bipolar transistors; Manufacturing; National electric code; Performance gain; Power amplifiers; Power generation; Satellites; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575822

Filename

575822