DocumentCode
3022241
Title
Evaluation of Static and Dynamic Performance of Silicon-Based Bipolar Phototransistors Under Radiation
Author
Quadri, G. ; Gilard, O. ; Roux, J.L. ; Spezzigu, P. ; Bechou, L. ; Vanzi, M. ; Ousten, Y. ; Gibard, D.
Author_Institution
Centre Nat. d´´Etudes Spatiales, Toulouse
fYear
2008
fDate
14-18 July 2008
Firstpage
131
Lastpage
134
Abstract
Total dose and displacement damage irradiations were performed on two references of silicon-based bipolar phototransistors. The evolution of photocurrent and dynamic performances (rise and fall time) were analyzed. The main results are presented in this paper.
Keywords
bipolar transistors; elemental semiconductors; phototransistors; radiation hardening (electronics); silicon; Si; bipolar phototransistors; displacement damage irradiation; dynamic performance; photocurrent; radiation hardened phototransistors; static performance; total ionizing dose irradiation; Ceramics; Glass; Laboratories; Packaging; Passivation; Phototransistors; Silicon; Telephony; Testing; Windows;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location
Tucson, AZ
Print_ISBN
978-1-4244-2545-7
Type
conf
DOI
10.1109/REDW.2008.30
Filename
4638628
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