DocumentCode
3024384
Title
Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor
Author
Pan, Xiaofang ; Zhao, Xiaojin ; Bermak, Amine ; Fan, Zhiyong
Author_Institution
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2012
fDate
20-23 May 2012
Firstpage
3270
Lastpage
3273
Abstract
In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.
Keywords
CMOS integrated circuits; II-VI semiconductors; gas sensors; low-power electronics; nanostructured materials; semiconductor device reliability; sensitivity; wide band gap semiconductors; zinc compounds; CMOS circuitry; ZnO; conducting channels; gas sensor; high temperature-caused reliability degradation; low power CMOS-compatible ZnO nanocomb; power-hungry heating components; recovery time; response time; sensitivity; Electrodes; Gas detectors; Sensitivity; Substrates; Temperature sensors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6272023
Filename
6272023
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