• DocumentCode
    3024384
  • Title

    Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

  • Author

    Pan, Xiaofang ; Zhao, Xiaojin ; Bermak, Amine ; Fan, Zhiyong

  • Author_Institution
    Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    3270
  • Lastpage
    3273
  • Abstract
    In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.
  • Keywords
    CMOS integrated circuits; II-VI semiconductors; gas sensors; low-power electronics; nanostructured materials; semiconductor device reliability; sensitivity; wide band gap semiconductors; zinc compounds; CMOS circuitry; ZnO; conducting channels; gas sensor; high temperature-caused reliability degradation; low power CMOS-compatible ZnO nanocomb; power-hungry heating components; recovery time; response time; sensitivity; Electrodes; Gas detectors; Sensitivity; Substrates; Temperature sensors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6272023
  • Filename
    6272023