MOVPE growth of InGaAsP/InP-based vertical cavity structures for wafer-fused VCSELs

Author

Amano, C. ; Itoh, Y. ; Ohiso, Y. ; Takenouchi, H. ; Tadokoro, T. ; Kurokawa, T.

Author_Institution

NTT Opto-Electron. Labs., Atsugi, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

424

Lastpage

427

Abstract

We have successfully grown InGaAsP/InP-based vertical cavity structures with precisely adjusted resonant-cavity wavelength by metalorganic vapor phase epitaxy (MOVPE). These structures have been used to create vertical cavity surface emitting lasers (VCSELs) that emit at exactly 1.55 μm by wafer-fusing to GaAs/AlAs distributed-Bragg-reflectors (DBRs). In such growth, high lateral uniformity and reproducibility of the InGaAsP layer thickness and composition are essential for obtaining well-defined resonant-cavity and MQW PL peak wavelengths

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.55 mum; GaAs-AlAs; GaAs/AlAs distributed-Bragg-reflectors; InGaAsP layer thickness reproducibility; InGaAsP-InP; InGaAsP/InP-based vertical cavity structures; InP; MOVPE growth; MQW PL peak wavelengths; high lateral uniformity; metalorganic vapor phase epitaxy; precisely adjusted resonant-cavity wavelength; wafer-fused VCSELs; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Mirrors; Optical surface waves; Reproducibility of results; Resonance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600184

Filename

600184