Single phase transducer consisting of AlGaN/GaN

Author

Hohkawa, Kohji ; Oshiyama, Satoshi ; Terao, Yuji ; Koh, Keishin ; Nishimura, Kazumi ; Shigekawa, Naoteru

Author_Institution

Fac. of Eng., Kanagawa Inst. of Technol., Atsugi

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

1928

Lastpage

1931

Abstract

2 DEG has effective for realize functional device because it could be controlled by applied electric fields, but it has relatively poor conductive characteristics compared to the metal electrodes. In this paper, we have studied possibility of 2 DEG electrodes as the buried electrode for the single phase transducer, which would be suited for realizing high speed device. We have proposed new single phase transducers using 2 DEG electrode and experimentally verified its performance.

Keywords

III-V semiconductors; aluminium compounds; surface acoustic wave transducers; two-dimensional electron gas; wide band gap semiconductors; 2 DEG electrodes; 2D electron gas; AlGaN-GaN; conductive characteristic; functional SAW device; high speed device; metal electrode; single phase transducer; Aluminum gallium nitride; Compressive stress; Electrodes; Electrons; Frequency; Gallium nitride; Piezoelectric films; Surface acoustic waves; Thermal stresses; Transducers; AlGaN / GaN 2 DEG; Switching operation; component; f-SAW; single phase transducer;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0475

Filename

4803596