Passivated boron emitters for n-type buried contact solar cells

Author

Slade, Alexander M. ; Honsberg, Christiana B. ; Wenham, Stuart R.

Author_Institution

Centre for Photovoltaic Eng., New South Wales Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

268

Lastpage

271

Abstract

The emitter saturation current, J_oe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO₂ passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for J_oe varied from 1.5-300 fA/cm². The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter

Keywords

boron; diffusion; elemental semiconductors; passivation; semiconductor doping; silicon; solar cells; Si:B; SiO₂ passivation; boron diffused emitter; boron diffusions; boron tribromide; diffusion source; double sided floating junction solar cells; emitter saturation current; forming gas anneal; light diffusions; low saturation current; n-type Cz wafers; n-type buried contact solar cells; passivated boron emitters; saturation current; sheet resistivities; Australia; Boron; Conductivity; Current measurement; Degradation; Passivation; Photovoltaic cells; Photovoltaic systems; Solar power generation; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915809

Filename

915809