Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Author

Chun, Min-Doo ; Kim, Donghwan ; Choo, Jaebum ; Huh, Joo-Youl

Author_Institution

Div. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea

fYear

2000

fDate

2000

Firstpage

315

Lastpage

318

Abstract

Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×10¹³ cm^-2 to 2×10 ¹⁵ cm^-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×10¹³ cm^-2 and 3×10¹³ cm^-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements

Keywords

EBIC; Hall effect; boron; elemental semiconductors; p-n junctions; proton effects; silicon; solar cells; 3 MeV; Cz wafers; EBIC; Fz wafers; Hall measurements; Si:B; boron-doped silicon wafers; cross-sectional electron beam-induced current; current-voltage measurements; p-n junction; p-n-p structure; p-type Si wafers; proton irradiation; room temperature; space solar cells; spreading resistance; type conversion; Current measurement; Degradation; Electric variables measurement; Electrical resistance measurement; Electrostatic measurements; Lattices; Photovoltaic cells; Protons; Silicon; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915825

Filename

915825