Optical characterization of InGaAs/InP quantum wire overgrowth by hydride VPE with InP

Author

Kerkel, K. ; Braun, W. ; Forchel, A. ; Lourdudoss, S. ; Seifert, W. ; Carlsson, N. ; Samuelson, L.

Author_Institution

Tech. Phys., Wurzburg Univ., Germany

fYear

1997

fDate

11-15 May 1997

Firstpage

467

Lastpage

470

Abstract

We have investigated the optical properties of InGaAs/InP quantum wires prior to and after hydride VPE overgrowth. Hydride VPE is a particularly efficient overgrowth technique as it permits overgrowths with semiinsulating InP at large growth rates without leaving any voids. With this technique, a homogeneous and smooth surface was achieved. PL measurements of the overgrown wires with widths between 500 nm and 18 nn showed a significant increase of the luminescence intensities of up to one order of magnitude after overgrowth and a corresponding decrease of the side wall recombination velocity of up to two orders of magnitude. In addition, the radiative lifetimes of the wires below 100 nm are significantly increased after the overgrowth and are raised above the value of a 2D reference sample

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; radiative lifetimes; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; InGaAs-InP; InGaAs/InP quantum wire; hydride VPE overgrowth; optical properties; photoluminescence; radiative lifetime; semi-insulating InP; sidewall recombination velocity; Electron beams; Indium gallium arsenide; Indium phosphide; Lithography; Luminescence; Radiative recombination; Surface morphology; Velocity measurement; Wet etching; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600195

Filename

600195