DocumentCode
3028781
Title
20 GHz high performance planar Si/InGaAs P-I-N photodetector
Author
Levine, B.F. ; Hawkins, A.R. ; Hiu, S. ; Tseng, B.J. ; King, C.A. ; Gruezke, L.A. ; Johnson, R.W. ; Zolnowski, D.R. ; Bowers, J.E.
Author_Institution
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear
1997
fDate
11-15 May 1997
Firstpage
483
Lastpage
485
Abstract
Wafer fused planar Si/InGaAs p-i-n photodetectors were fabricated. They show high internal quantum efficiency (η≈1), high speed (21 GHz), record low dark current (100 pA at 4 V bias), and no evidence of charge trapping, recombination centers or a bandgap discontinuity at the heterointerface
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; p-i-n photodiodes; photodetectors; silicon; 20 GHz; Si-InGaAs; bandgap discontinuity; charge trapping; dark current; heterointerface; high speed device; internal quantum efficiency; recombination center; wafer fused planar Si/InGaAs p-i-n photodetector; Absorption; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Substrates; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600199
Filename
600199
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