Recent research trends in gate engineered tunnel FET for improved current behavior by subduing the ambipolar effects: A review

The gradual progress in the development of a Tunnel Field Effect transistor as a suitable alternative to conventional Metal Oxide Semiconductor Field Effect Transistor for achieving superior current performance in nanoscale low power device has been considered in this review. Beginning from a simple p-i-n reverse biased diode, we have tried to cover various recently developed gate engineered TFET structures in terms of their current behavior to show that by cleverly engineering the gate electrode, TFETs with superior current characteristics can be realized. Apart from this, we have also presented a concise discussion on the problem and possible solution of ambipolarity in TFETs, thereby making the use TFETs with low leakage current possible in complimentary digital circuits.