• DocumentCode
    3030248
  • Title

    Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation

  • Author

    Martinie, S. ; Uznanski, S. ; Autran, J.L. ; Roche, P. ; Gasiot, G. ; Munteanu, D. ; Sauze, S. ; Loaiza, P. ; Warot, G. ; Zampaolo, M.

  • Author_Institution
    Inst. of Mater., Microelectron. & Nanosci. of Provence (IM2NP), Aix-Marseille Univ., Marseille, France
  • fYear
    2010
  • fDate
    2-4 June 2010
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    This work reports a long-duration (> 2 years) realtime characterization study of SRAM memories at the underground laboratory of Modane (LSM) to quantify alpha emitter radioactive impurities present in the circuit materials and responsible of soft-errors detected in absence of atmospheric neutrons. Experimental data have been obtained using ~3.5 Gbit of SRAMs manufactured in CMOS 130 nm technology. In a second part of this work, the underground experiment is simulated using a Monte-Carlo code to extract the contamination level related to the disintegration chain of uranium in silicon at secular equilibrium. Results are finally compared to data obtained from experimental counting experiments using an ultra low background alpha-particle gas proportional counter.
  • Keywords
    CMOS digital integrated circuits; Monte Carlo methods; SRAM chips; CMOS SRAM; Monte-Carlo simulation; alpha emitter radioactive impurity; alpha-emitter; atmospheric neutrons; secular equilibrium; single-event rate; size 130 nm; ultra low background alpha-particle gas proportional counter; Atmospheric modeling; CMOS technology; Circuit simulation; Data mining; Impurities; Laboratories; Manufacturing; Neutrons; Radioactive materials; Random access memory; Alpha emitter; Single-Event Rate (SER); contamination; realtime testing; secular equilibrium; static memory; uranium; uranium disintegration chain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology (ICICDT), 2010 IEEE International Conference on
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4244-5773-1
  • Type

    conf

  • DOI
    10.1109/ICICDT.2010.5510250
  • Filename
    5510250