DocumentCode
3030315
Title
Key issues for the efficiency improvement of silicon basis stacked solar cells
Author
Hamakawa, Yoshihiro ; Takakura, Hideyuki
Author_Institution
Ritsumeikan Univ., Shiga, Japan
fYear
2000
fDate
2000
Firstpage
766
Lastpage
771
Abstract
Aiming for the development of high efficiency with low cost next generation solar cells, a series of systematic investigations has been made on a-Si//poly(μc)-Si thin film stacked solar cells. The basic concept of multi-band gap stacked solar cell and its historical background on the selection of material combinations are briefly introduced. Secondly, some key issues for efficiency improvement on the a-Si top cell are demonstrated. Then, a series of the experimental approaches on the double heterostructure a-Si top cell along with the issues are presented and obtained optimum design parameters on the a-Si top cell are reported. Thirdly, current topics on the bottom cell technologies are classified with active material thickness and their present status are overviewed. Then, some recent technologies on the microcrystalline (μc) basis bottom cells are reviewed. Finally a comparison is made on the realistic achievable theoretical efficiency obtained from computer simulation with some of the top data and remaining problems are discussed
Keywords
amorphous semiconductors; elemental semiconductors; silicon; solar cells; Si; a-Si top cell; a-Si//poly(μc)-Si thin film stacked solar cells; active material thickness; bottom cell technologies; computer simulation; double heterostructure a-Si top cell; efficiency improvement; low cost next generation solar cells; material combinations; microcrystalline basis bottom cells; multi-band gap stacked solar cell; optimum design parameters; silicon basis stacked solar cells; Absorption; Amorphous materials; Costs; Equivalent circuits; Heterojunctions; Photonics; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915996
Filename
915996
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