Fast deposition of μc-Si:H films from Ar-diluted SiH4 plasma in RF glow discharge

Using Ar as diluent for SiH₄ in RF glow discharge, we obtained undoped and doped μc-Si:H films having high σ_D low ΔE and low α; exhibiting sharp crystallographic rings in the electron diffraction pattern, c-Si grains of 100 Å diameter in the micrograph and intense Raman peak around 520 cm^-1 . The films were prepared at a remarkably high deposition rate of 50-70 Å/min contributed from SiH₄ having a flow rate of 1 SCCM, and hence it provides enormous promise towards an economic throughput in the fabrication of devices using this material