Microcrystalline silicon films using a fluoride seed layer on glass substrates for solar cell applications

Author

Ahn, Byeong-Jae ; Kim, Do-Young ; Yoo, Jin-Su ; Yi, Junsin

Author_Institution

Sch. of Electr. & Comput. Eng., Sungkyunkwan Univ., Suwon, South Korea

fYear

2000

fDate

2000

Firstpage

841

Lastpage

844

Abstract

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The XRD analysis on CaF₂/glass illustrated (220) preferential orientation and showed lattice mismatch less than 0.69% with Si. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300°C by using a CaF₂/glass substrate. The μc-Si films exhibited crystallization in (111) and (220) planes, grain size of 700 Å, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4×10^-7 S/cm

Keywords

X-ray diffraction; calcium compounds; crystallisation; elemental semiconductors; glass; photoconductivity; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; (111) plane; (220) plane; (220) preferential orientation; 300 C; 700 A; CaF₂; CaF₂/glass; Si; Si film growth; XRD analysis; activation energy; crystalline volume fraction; crystallization; dark conductivity; fluoride seed layer; glass substrates; grain size; lattice mismatch; low substrate temperature; microcrystalline Si films; microcrystalline silicon films; photo-conductivity; solar cell; Conductive films; Crystallization; Glass; Grain size; Lattices; Semiconductor films; Silicon; Substrates; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916014

Filename

916014