Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

Author

Hartmann, Q.J. ; Fresina, M.T. ; Ahmari, D.A. ; Stockman, S.A. ; Baker, J.E. ; Barlage, D. ; Hwangbo, H. ; Yung, A. ; Feng, M. ; Stillman, G.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

505

Lastpage

508

Abstract

The effects of rapid thermal annealing on InP/InGaAs heterojunction bipolar transistors with a carbon-doped base have been studied. The hydrogen concentration in the base has been studied as a function of the anneal temperature and time. A 10 minute anneal at 590°C under N₂ completely eliminates hydrogen from the base. By using shorter anneals and/or lower temperatures, the dc and rf device performance were studied as a function of the base hydrogen concentration. The results show that the base sheet resistance decreases with annealing time as does the dc current gain. As expected, the maximum frequency of oscillation increases as the base resistance decreases. The unity current-gain cutoff frequency, however, is significantly enhanced by removing hydrogen despite the resulting increase in the base hole concentration. A likely explanation for this behavior is that a large percentage of the hydrogen in the InGaAs base region incorporates as a compensating donor rather than forming a neutral CH complex

Keywords

CVD coatings; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; rapid thermal annealing; 590 C; DC device; InP-InGaAs; InP/lnGaAs HBT; LP-MOCVD growth; RF device; carbon-doped base; compensating donor; current gain; heterojunction bipolar transistor; hole concentration; hydrogen concentration; maximum frequency of oscillation; neutral CH complex; rapid thermal annealing; sheet resistance; unity current-gain cutoff frequency; Current measurement; Electrical resistance measurement; Frequency measurement; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; Rapid thermal annealing; Surface morphology; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600213

Filename

600213