Development of 1.25 eV InGaAsN for triple junction solar cells

Author

Li, N.Y. ; Sharps, P.R. ; Stan, M. ; Newman, F. ; Hills, J.S. ; Hou, H.Q. ; Gee, J.M. ; Aiken, D.J.

Author_Institution

EMCORE Photovoltaics, Albuquerque, NM, USA

fYear

2000

fDate

2000

Firstpage

986

Lastpage

989

Abstract

Current GaInP₂/GaAs/Ge triple junction solar cells currently starting production at EMCORE have achieved average lot efficiencies of greater than 26%, with an EOL/BOL of 92% for exposure to 1 MeV electrons at a fluence of 5×10¹⁴ e/cm². Development of the next generation high efficiency multijunction solar cell will involve the development of new materials lattice matched to GaAs. One material of interest is 1.05 eV InGaAsN, to be used in a four junction GaInP₂/GaAs/InGaAsN/Ge device. Despite several years of effort, the development of the 1.05 eV InGaAsN material has been difficult. As an alternative, they have been looking at 1.25 eV InGaAsN for use in a GaInP₂/InGaAsN/Ge triple junction cell. The authors present results for their work with the 1.25 eV InGaAsN material

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; solar cells; 1 MeV; 1.05 eV; 1.25 eV; EMCORE; GaInP₂-GaAs-InGaAsN-Ge; GaInP₂-GaAs-InGaAsN-Ge four-junction solar cells; electron exposure; high-efficiency multijunction solar cells; materials development; Charge carrier lifetime; Electrons; Gallium arsenide; Histograms; Laboratories; Lattices; Lighting; Nitrogen; Photovoltaic cells; Renewable energy resources;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916051

Filename

916051