DocumentCode
3031884
Title
Proton-induced upsets in 41-nm NAND floating gate cells
Author
Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Blackmore, E.W.
Author_Institution
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
191
Lastpage
194
Abstract
The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton upsets are not negligible anymore, due to a combination of direct and indirect ionization effects.
Keywords
NAND circuits; flash memories; proton effects; radiation hardening (electronics); NAND flash memory; NAND floating gate cell; indirect ionization effect; proton induced upset; size 41 nm; Electric fields; Flash memory; Ionization; Laboratories; Nonvolatile memory; Protons; Radiation effects; Flash memories; Radiation effects; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131302
Filename
6131302
Link To Document