Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

Author

Doridant, A. ; Jarrix, S. ; Raoult, J. ; Blain, A. ; Chatry, N. ; Calvel, P. ; Hoffmann, P. ; Dusseau, L.

Author_Institution

Inst. d´´Electron. du Sud (IES), UM2, Montpellier, France

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

222

Lastpage

225

Abstract

Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the modification in the susceptibility to 100 MHz - 1.5 GHz signals of a discrete low frequency transistor subsequently to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. A synergy effect between near field electromagnetic interferences and total ionizing dose is observed.

Keywords

electromagnetic fields; electromagnetic interference; magnetic susceptibility; microwave bipolar transistors; space vehicle electronics; common emitter configuration; discrete low frequency transistor; electromagnetic fields; electromagnetic susceptibility; frequency 100 MHz to 1.5 GHz; military electronic components; near field electromagnetic interferences; no-irradiated transistors; single bipolar transistor; space electronic components; synergy effect; Bipolar transistors; Electromagnetic interference; Electromagnetics; Integrated circuits; Probes; Radiation effects; Transistors; Bipolar Transistor; Near-field interference; Total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131307

Filename

6131307