• DocumentCode
    3032054
  • Title

    Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors

  • Author

    Rafi, J.M. ; Cardona-Safont, L. ; Zabala, M. ; Campabadal, F. ; Pellegrini, G. ; Lozano, M.

  • Author_Institution
    Centro Nacional de Microelectron., Barcelona
  • fYear
    2007
  • fDate
    Jan. 31 2007-Feb. 2 2007
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    With the aim to identify an appropriate low-temperature surface passivation process that could be used for bulk lifetime estimation of high resistivity (HR) (>1 kOmega-cm) silicon for radiation detectors, different candidate passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic Czochralski (MCZ) and HR float zone (FZ)) substrates. Minority carrier lifetime measurements were performed by means of a microwave PhotoConductance Decay single point setup. The results show that SiNx PECVD layers deposited at 200degC may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors.
  • Keywords
    carrier lifetime; crystal growth from melt; particle detectors; passivation; plasma CVD; silicon; HR float zone substrate; HR magnetic Czochralski substrate; PECVD layers; bulk lifetime estimation; high resistivity silicon; low-temperature surface passivation process; microwave photoconductance decay; minority carrier lifetime measurements; n-type standard Czochralski substrate; p-type standard Czochralski substrate; radiation detectors; surface passivation layers; temperature 200 C; Charge carrier lifetime; Conductivity; Life estimation; Lifetime estimation; Microwave measurements; Passivation; Performance evaluation; Photoconductivity; Radiation detectors; Silicon; High resistivity silicon; Minority carrier lifetime; Passivation; Silicon radiation detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2007 Spanish Conference on
  • Conference_Location
    Madrid
  • Print_ISBN
    1-4244-0868-7
  • Type

    conf

  • DOI
    10.1109/SCED.2007.383985
  • Filename
    4271156