The Effect of RF and MW Power on the SiNx Films Grown by PECVD

The deposition of silicon nitride (SiN_x) films by PECVD is widely used for silicon solar cell manufacturing due to its potential for low surface recombination, high bulk passivation and good anti-reflection coating properties. Some experiments have been carried out in our lab in order to optimise the deposition conditions. The RF and MW power, responsible of the silane and ammonia dissociation, are going to be examined carefully in order to achieve the best SiNx passivation layer. Improvements between 120% and 232% for the effective lifetime and 112% and 183% for the bulk lifetime (after an annealing step) have been reached after the RF power optimization. In the same way, improvements between 182% and 234% for the effective lifetime and 167% and 250% for the bulk lifetime (after an annealing step) have been reached after the MW power optimization. These results show the potential of this kind of passivation layers.