DocumentCode
3032237
Title
Electric-field drive optical modulator using Si ring resonator
Author
Amemiya, Y. ; Tanushi, Y. ; Tokunaga, T. ; Yokoyama, S.
Author_Institution
Res. Center for Nanodevices & Syst., Hiroshima Univ., Higashi-Hiroshima
fYear
2008
fDate
4-7 Aug. 2008
Firstpage
1
Lastpage
2
Abstract
The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.
Keywords
ULSI; electro-optical modulation; elemental semiconductors; integrated optics; optical interconnections; optical resonators; silicon; Si; carrier injection type modulations; electric-field drive optical modulator; optical modulation; ring resonator; voltage 200 V; Optical films; Optical interconnections; Optical interferometry; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Resonance; Scanning electron microscopy; Voltage; Si Ring resonator; carrier concentration modulation; electric-field drive; optical modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics in Switching, 2008. PS 2008. International Conference on
Conference_Location
Sapporo
Print_ISBN
978-1-4244-4326-0
Electronic_ISBN
978-4-8855-2228-4
Type
conf
DOI
10.1109/PS.2008.4804175
Filename
4804175
Link To Document