• DocumentCode
    3032237
  • Title

    Electric-field drive optical modulator using Si ring resonator

  • Author

    Amemiya, Y. ; Tanushi, Y. ; Tokunaga, T. ; Yokoyama, S.

  • Author_Institution
    Res. Center for Nanodevices & Syst., Hiroshima Univ., Higashi-Hiroshima
  • fYear
    2008
  • fDate
    4-7 Aug. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.
  • Keywords
    ULSI; electro-optical modulation; elemental semiconductors; integrated optics; optical interconnections; optical resonators; silicon; Si; carrier injection type modulations; electric-field drive optical modulator; optical modulation; ring resonator; voltage 200 V; Optical films; Optical interconnections; Optical interferometry; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Resonance; Scanning electron microscopy; Voltage; Si Ring resonator; carrier concentration modulation; electric-field drive; optical modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics in Switching, 2008. PS 2008. International Conference on
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-4326-0
  • Electronic_ISBN
    978-4-8855-2228-4
  • Type

    conf

  • DOI
    10.1109/PS.2008.4804175
  • Filename
    4804175