• DocumentCode
    3032453
  • Title

    Modeling Germanium p-n Junctions for Multi-junction Solar Cell Applications

  • Author

    Espinet, P. ; Rey-Stolle, I. ; Galiana, B. ; Baudrit, M. ; Algora, C.

  • Author_Institution
    Univ. Politehnica de Madrid, Madrid
  • fYear
    2007
  • fDate
    Jan. 31 2007-Feb. 2 2007
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    An efficient germanium cell is a key element for attaining high efficiency in state-of-the-art triple junction solar cells. This work summarizes our efforts in the field of modeling of the quantum efficiency of germanium p/n junctions for photovoltaic applications. An analytic tool is presented and the most relevant parameters are discussed and modeled. Finally, some hints for the optimum design of germanium solar cells are deduced form the simulations.
  • Keywords
    elemental semiconductors; germanium; p-n junctions; semiconductor device models; solar cells; Ge; multi-junction solar cells; p-n junctions; photovoltaic applications; quantum efficiency; triple-junction solar cells; Analytical models; Doping; Gallium arsenide; Germanium; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Telecommunications; Germanium; Multi-junction Solar Cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2007 Spanish Conference on
  • Conference_Location
    Madrid
  • Print_ISBN
    1-4244-0868-7
  • Type

    conf

  • DOI
    10.1109/SCED.2007.384002
  • Filename
    4271177