DocumentCode
3032453
Title
Modeling Germanium p-n Junctions for Multi-junction Solar Cell Applications
Author
Espinet, P. ; Rey-Stolle, I. ; Galiana, B. ; Baudrit, M. ; Algora, C.
Author_Institution
Univ. Politehnica de Madrid, Madrid
fYear
2007
fDate
Jan. 31 2007-Feb. 2 2007
Firstpage
96
Lastpage
99
Abstract
An efficient germanium cell is a key element for attaining high efficiency in state-of-the-art triple junction solar cells. This work summarizes our efforts in the field of modeling of the quantum efficiency of germanium p/n junctions for photovoltaic applications. An analytic tool is presented and the most relevant parameters are discussed and modeled. Finally, some hints for the optimum design of germanium solar cells are deduced form the simulations.
Keywords
elemental semiconductors; germanium; p-n junctions; semiconductor device models; solar cells; Ge; multi-junction solar cells; p-n junctions; photovoltaic applications; quantum efficiency; triple-junction solar cells; Analytical models; Doping; Gallium arsenide; Germanium; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Telecommunications; Germanium; Multi-junction Solar Cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2007 Spanish Conference on
Conference_Location
Madrid
Print_ISBN
1-4244-0868-7
Type
conf
DOI
10.1109/SCED.2007.384002
Filename
4271177
Link To Document