• DocumentCode
    3032699
  • Title

    Equivalent Electrical Circuit Model for the Post-Breakdown Current in SiO2/TiO2 Gate Stacks

  • Author

    Miranda, E. ; Tinoco, J. ; Garduno, I. ; Estrada, M. ; Cerdeira, A.

  • Author_Institution
    Univ. Autonoma de Barcelona, Barcelona
  • fYear
    2007
  • fDate
    Jan. 31 2007-Feb. 2 2007
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    In this work we examine the electrical behavior of thin (~10 nm) SiO2/TiO2 gate insulator stacks in MOS capacitors that have undergone multiple hard breakdown events. The post-breakdown current is modeled using a simple equivalent electrical circuit consisting of a diode with series and parallel resistances. We show that the current flowing through the non-damaged oxide area still plays a significant role even after breakdown. Similarities with previous studied systems are also discussed.
  • Keywords
    MOS capacitors; equivalent circuits; semiconductor device breakdown; semiconductor device models; silicon compounds; titanium compounds; MOS capacitors; SiO2-TiO2; SiO2/TiO2 gate insulator stacks; electrical behavior; equivalent electrical circuit model; nondamaged oxide; post-breakdown current; Circuits; Dielectric materials; Diodes; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Tunneling; Voltage; MOS; breakdown; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2007 Spanish Conference on
  • Conference_Location
    Madrid
  • Print_ISBN
    1-4244-0868-7
  • Type

    conf

  • DOI
    10.1109/SCED.2007.384011
  • Filename
    4271187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3032699