DocumentCode
3033304
Title
Thermal Analysis and Performance in 1.55um Bottom-emitting InAlGaAs VCSELs with Dielectric Mirror, Flip-chip Bonded on Si-Substrate
Author
Kim, J.D. ; Song, H.-W. ; Han, W.S. ; Yun, B.Y.
Author_Institution
Electron. & Telecommun. Res. Inst., Daejeon
fYear
2006
fDate
9-13 July 2006
Firstpage
355
Lastpage
357
Abstract
A novel structure of 1.55 um bottom-emitting InAlGaAs VCSELs grown by single-step MOCVD has been thermally analyzed in simulation and measurement through active sizes, to be optimized the performances for the flip-chip bonded assembly on Si-substrate.
Keywords
aluminium compounds; arsenic compounds; chemical vapour deposition; dielectric devices; flip-chip devices; gallium compounds; indium compounds; silicon; surface emitting lasers; thermal analysis; InAlGaAs; Si; dielectric mirror; flip-chip; metal-organic chemical vapor deposition; size 1.55 mum; thermal analysis; vertically-cavity surface-emitting laser; Analytical models; Assembly; Bonding; Dielectric measurements; MOCVD; Mirrors; Performance analysis; Performance evaluation; Size measurement; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on
Conference_Location
Jeju
Print_ISBN
978-89-955301-4-6
Electronic_ISBN
978-89-955301-4-6
Type
conf
DOI
10.1109/COINNGNCON.2006.4454655
Filename
4454655
Link To Document