Noise study in photodiodes based on InGaN/GaN MQW

Author

Navarro, Alvaro ; Rivera, Carlos ; Cuerdo, Roberto ; Pau, José Luis ; Pereiro, Juan ; Calle, Fernando ; Muñoz, Elías

Author_Institution

Univ. Politecnica de Madrid, Madrid

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

321

Lastpage

324

Abstract

The low frequency noise characteristics of InGaN/GaN multiple-quantum-well (MQW) P-I-N photodiodes have been studied. 1/f noise has been measured for two different In contents, under different reverse bias voltages and variable temperatures from 25 K to 623 K. Multilevel random telegraph signal (RTS) noise was found in several samples. The spectral response was measured in photovoltaic and biased mode. Specific detectivity was evaluated at various reverse voltages at temperatures up to 300degC. InGaN/GaN MQW photodiodes have been demonstrated to be a viable alternative for high temperature operation.

Keywords

1/f noise; III-V semiconductors; gallium compounds; high-temperature electronics; indium compounds; p-i-n photodiodes; quantum well devices; semiconductor device noise; 1/f noise; InGaN-GaN; P-I-N photodiodes; low frequency noise characteristics; multilevel random telegraph signal noise; multiple-quantum-well; specific detectivity; spectral response; temperature 25 K to 623 K; Frequency measurement; Gallium nitride; Low-frequency noise; Noise measurement; PIN photodiodes; Photovoltaic systems; Quantum well devices; Telegraphy; Temperature; Voltage; High-temperature; III-Nitrides; noise measurement; quantum well devices; ultraviolet detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.384058

Filename

4271236