Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS

Author

Verbeeck, Jens ; Van Uffelen, Marco ; Steyaert, Michiel S J ; Leroux, Paul

Author_Institution

Dept. ESAT-MICAS, Katholieke Univ. Leuven, Leuven, Belgium

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

156

Lastpage

159

Abstract

In this paper a radiation tolerant configurable instrumentation amplifier for use with resistive sensors, like strain gauge pressure sensors, is presented. The design features a 1.5 V differential amplifier, consuming 1.5 mW and utilizing a correlated double sampling technique (CDS) with a sample frequency of 20 kHz. The gain of the amplifier is digitally configurable between 27 and 400 and the input referred noise density equals 8.6 μV at room temperature. The circuit has a simulated radiation tolerance exceeding 1 MGy.

Keywords

CMOS analogue integrated circuits; differential amplifiers; electric sensing devices; radiation hardening (electronics); sampling methods; CDS; CMOS technology; MGy tolerant instrumentation amplifier; correlated double sampling technique; differential amplifier; frequency 20 kHz; power 1.5 mW; radiation tolerant configurable instrumentation amplifier; resistive sensors; size 130 nm; strain gauge pressure sensors; temperature 293 K to 298 K; voltage 1.5 V; voltage 8.6 muV; CMOS integrated circuits; Capacitors; Gain; Noise; Noise level; Radiation effects; Switches; Analog integrated circuits; CMOS technology; Pressure gauges; Reactor instrumentation; Switched capacitor circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131389

Filename

6131389