DocumentCode
3033902
Title
Alpha particle induced single-event error rates and scaling trends in commercial SRAM cells
Author
Chatterjee, I. ; Bhuva, B.L. ; Wen, S.-J. ; Wong, R.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
232
Lastpage
237
Abstract
Alpha particles are a critical reliability problem facing advanced technologies. This paper reports extensive tests over a wide range of technology nodes on CMOS SRAMs to study operating voltage, data pattern, operating frequency and operational-mode dependency of alpha particle induced single-event upsets rates.
Keywords
CMOS memory circuits; SRAM chips; alpha-particle effects; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); CMOS SRAM testing; SRAM cells; alpha particle-induced single-event error rates; data pattern; operating frequency; operating voltage; operational-mode dependency; reliability problem; Error analysis; Layout; Random access memory; Sensitivity; System-on-a-chip; Transistors; Visualization; Multiple Bit Upset (MBU); SER; SRAM; Single Bit Upset (SBU); alpha particle; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131400
Filename
6131400
Link To Document