PZT thin films for GaAs ferroelectric RAM applications

Author

Geideman, W.A. ; Wu, S.Y. ; Sanchez, L.E. ; Maderic, B.P. ; Liu, W.M. ; Naik, I.K. ; Watanabe, S.H.

Author_Institution

McDonnell Douglas Electronic Systems Co., Huntingdon Beach, CA, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

258

Lastpage

262

Abstract

Lead zirconate titanate (PZT) ferroelectric thin films prepared by the sol-gel technique have been successfully developed. The film preparation is described, and the experimental results on the characterization of the structural, dielectric, ferroelectric, switching endurance, and memory retention properties of the films are given. The preliminary results on the processing and integration of PZT capacitors and GaAs junction field-effect transistors for memory cells are presented

Keywords

III-V semiconductors; dielectric properties of liquids and solutions; ferroelectric devices; ferroelectric materials; ferroelectric storage; ferroelectric switching; ferroelectric thin films; field effect integrated circuits; gallium arsenide; integrated memory circuits; junction gate field effect transistors; lead compounds; random-access storage; sol-gel processing; thin film capacitors; GaAs ferroelectric RAM applications; GaAs junction field-effect transistors; PZT capacitors; PbZrO₃TiO₃-GaAs; dielectric properties; ferroelectric properties; ferroelectric thin films; film preparation; integration; memory cells; memory retention properties; processing; semiconductor; sol-gel technique; structure; switching endurance; Capacitors; Dielectric thin films; FETs; Ferroelectric films; Ferroelectric materials; Gallium arsenide; Nonvolatile memory; Random access memory; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200237

Filename

200237