DocumentCode
3036346
Title
Carbon-based interconnect: Performance, scaling and reliability of 3D stacked multilayer graphene system
Author
Yu, Tianhua ; Kim, Edwin ; Jain, Nikhil ; Xu, Yang ; Geer, Robert ; Bin Yu
Author_Institution
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We investigate performance, scaling, and reliability of 3D stacked multilayer graphene (s-MLG) as a new material candidate for carbon based interconnects, aiming to break through the limit of graphene monolayer in which electrical conduction and the associated wire scalability and reliability are largely hampered by its atomically-thin 2D nature. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping is used to engineer the Dirac point and to reduce graphene-to-metal contact resistance, improving key performance metrics of the s-MLG. We demonstrate that 3D s-MLG could potentially serve as a viable material system for high-speed, reliable on-chip interconnects in the “post-Cu” era.
Keywords
doping; graphene; reliability; 3D stacked multilayer graphene system; Dirac point; associated wire scalability; carbon-based interconnect; electrical conduction; electrical stress-induced doping; graphene monolayer; graphene-to-metal contact resistance; material system; monolayer graphene; reliability; superior wire conduction; Conductivity; Copper; Nonhomogeneous media; Reliability; Resistance; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131508
Filename
6131508
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