High performance 300mm backside illumination technology for continuous pixel shrinkage

Author

Yaung, D.N. ; Hsieh, B.C. ; Wang, C.C. ; Liu, J.C. ; Wang, T.J. ; Wang, W.D. ; Chuang, C.C. ; Chao, C. ; Tu, Y.L. ; Tsai, C.S. ; Hsu, T.L. ; Ramberg, F. ; Mo, W.P. ; Rhodes, H. ; Tai, D. ; Venezia, V.C. ; Wuu, S.G.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.

Keywords

CMOS image sensors; annealing; dielectric thin films; elemental semiconductors; integrated circuit noise; silicon; wafer-scale integration; BSI technology; CMOS image sensor process; Si; backside illumination sensor; backside junction formation; continuous pixel shrinkage; dielectric film structure; high performance backside illumination technology; optical performance; silicon thickness variation; size 0.9 mum; size 300 mm; thermal annealing; wafer distortion; Crosstalk; Laser noise; Optical distortion; Optical filters; Optical sensors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131512

Filename

6131512