MOVPE-based localized epitaxial growth techniques and its applications

Author

Moerman, I. ; Van Caenegem, T. ; Van Daele, P. ; Demeester, P.

Author_Institution

INTEC, Ghent Univ., Belgium

fYear

1997

fDate

11-15 May 1997

Firstpage

610

Lastpage

613

Abstract

As the functionality of InP-based photonic integrated circuits (PICs) is increasing rapidly and a wider range of components is integrated on a single chip, there is a need for advanced epitaxial techniques which enable the formation of regions with different bandgap energy simultaneously in a single epitaxial growth step. In this paper two MOVPE-based technologies which have the potential to meet those requirements are reviewed: selective area growth (SAG) and shadow masked growth (SMG)

Keywords

III-V semiconductors; indium compounds; integrated optics; optical fabrication; semiconductor growth; vapour phase epitaxial growth; InGaAs-InP; InP; InP-based photonic integrated circuits; MOVPE-based localized epitaxial growth techniques; bandgap energy; selective area growth; shadow masked growth; single epitaxial growth step; Bonding; Dielectric substrates; Epitaxial growth; Indium phosphide; Inductors; Information technology; Integrated circuit technology; Photonic band gap; Photonic integrated circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600240

Filename

600240