Reliability perspectives for high density PRAM manufacturing

Author

Ahn, Dong-Ho ; Song, Yoonjong ; Jeong, Hoon ; Kim, Byeungchul ; Kang, Youn-Seon ; Dong-ho Ahn ; Kwon, Yongwoo ; Nam, Seok Woo ; Jeong, Gitae ; Kang, Hokyu ; Chung, Chilhee

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea

fYear

2011

fDate

5-7 Dec. 2011

Abstract

This paper discussed the key reliability issues for manufacturing high density phase change memory (PRAM). There are its own unique phenomena, such as resistance fluctuation, structural relaxation and crystallization, which are closely correlated with the device reliability characteristics, including data retention, cycling endurance, and write disturbance. Optimizing material composition and controlling doping concentration and minimizing variability of physical dimensions can improve the reliability issues. Above all, isotropic dimension scaling along with writing current scaling is essential for continuing scaling down below 20 nm node.

Keywords

integrated circuit manufacture; integrated circuit reliability; phase change memories; crystallization; cycling endurance; data retention; doping concentration control; high density PRAM manufacturing; high density phase change memory manufacturing; isotropic dimension scaling; material composition optimization; physical dimensions variability minimization; reliability perspective; resistance fluctuation; structural relaxation; write disturbance; writing current scaling; Crystallization; Doping; Heating; Impurities; Reliability; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131542

Filename

6131542