Effect on regrowth interface quality of a new treatment, ACE, in a process using hydrocarbon gas RIE to fabricate InP-based BH-LD

Author

Yamamoto, N. ; Kishi, K. ; Kondo, Y. ; Matsumoto, S. ; Kadota, Y. ; Okamoto, H. ; Mawatari, H. ; Oohashi, H. ; Suzaki, Y.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

614

Lastpage

617

Abstract

ACE (ammonium sulfide combined etching) is a new treatment designed for use in hydrocarbon gas RIE based fabrication of InP-based buried-heterostructure (BH) laser diodes (LD). ACE involves dipping a sample in ammonium sulfide (NH₄S_x) solution at room temperature for 10 minutes and then treating it again with sulfuric acid prior to regrowth. We found that ACE improves regrowth interface quality and LD characteristics due to its ability to remove impurities incorporated during the process

Keywords

III-V semiconductors; etching; impurity distribution; indium compounds; interface structure; leakage currents; optical fabrication; semiconductor lasers; sputter etching; 10 min; 300 K; H₂SO₄; InP; InP-based BH-LD fabrication; NH₄S; NH₄S_x combined etching; NH₄S_x solution dipping; ammonium sulfide combined etching; buried-heterostructure laser diodes; forward I-V characteristics; hydrocarbon gas RIE; impurity pile-up; impurity removal; leakage current; regrowth interface quality; room temperature; sulfuric acid treatment; Diode lasers; Epitaxial growth; Etching; Fabrication; Hydrocarbons; Impurities; Plasma applications; Plasma chemistry; Plasma properties; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600242

Filename

600242