Highly sensitive and reliable X-ray detector with HgI2 photoconductor and oxide drive TFT

Author

Kim, Sun Il ; Kim, Sang Wook ; Park, Jae Chul ; Kim, Young ; Han, Sang Wook ; Kim, Ho Kyung ; Kim, Chang Jung ; Chung, U-In ; Yoo, In-Kyeong ; Kim, Kinam

Author_Institution

Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We successfully fabricated the highly sensitive and reliable X-ray flat panel detector with HgI₂ photoconductor and Oxide drive TFT. The HgI₂ was fabricated by screen printing of paste and various properties were tested. The HgI₂ has 3 times higher sensitivity than a-Se at the applied bias below 150V. Also it shows better stability under high accumulation dose and humidity. As a drive TFT, HfInZnO oxide TFT was used and it has lower leakage current and higher mobility than a-Si TFT indicating the improvement of signal-to-noise. These are very promising results for applications in large area X-ray flat panel detector with higher X-ray sensitivity and lower dose requirement for Mammography imaging.

Keywords

II-VI semiconductors; X-ray detection; hafnium compounds; indium compounds; leakage currents; mammography; mercury compounds; photoconducting materials; thin film transistors; wide band gap semiconductors; zinc compounds; HfInZnO; HgI₂; HgI₂ photoconductor; X-ray sensitivity; a-Si TFT; high accumulation dose; lower leakage current; mammography imaging; oxide drive TFT; reliable X-ray detector; reliable X-ray flat panel detector; screen printing; signal-to-noise improvement; Films; Photoconducting materials; Printing; Sensitivity; Thermal stability; Thin film transistors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131550

Filename

6131550