DocumentCode
3037576
Title
Large-signal analysis of p-type GaAs IMPATT diode
Author
El-Badawy, El-Sayed A. ; Ibrahim, Said H.
Author_Institution
Fac. of Eng., Alexandria Univ., Egypt
fYear
2000
fDate
2000
Firstpage
137
Lastpage
141
Abstract
This paper presents a detailed study of p-type GaAs IMPATT diodes. This is important in order to obtain better insight into the operation of this diode type, which is not sufficiently studied. Hence, it is possible to design and optimize the structure of the double-drift GaAs IMPATT and the circuit where this IMPATT is embedded. Some important conclusions concerning the effect of the peak value of the microwave signal on IMPATT operation are drawn
Keywords
III-V semiconductors; IMPATT diodes; gallium arsenide; optimisation; semiconductor device models; GaAs; IMPATT operation; circuit-embedded IMPATT diode; diode operation; diode structure design; diode structure optimization; double-drift GaAs IMPATT; large-signal analysis; microwave signal; p-type GaAs IMPATT diode; Charge carriers; Computer science; Delay effects; Design optimization; Diodes; Doping; Gallium arsenide; Microwave circuits; Optimized production technology; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location
Tehran
Print_ISBN
964-360-057-2
Type
conf
DOI
10.1109/ICM.2000.916431
Filename
916431
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