• DocumentCode
    3037590
  • Title

    Pb1-xCdxS accommodation coefficient calculations

  • Author

    Nejad, Shahram Mohammad ; Mazloumin, Mohammad Ali

  • Author_Institution
    Dept. of Electr. Eng., Iran Univ. of Sci. & Technol., Tehran, Iran
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    143
  • Lastpage
    145
  • Abstract
    In this paper, the accommodation coefficient of PbCdS is calculated for the first time. The key elements describing the accommodation coefficient are presented. Based on the theoretical adaptation of the existing formulas, and the data obtained from the variety of PbCdS films made by hot wall epitaxy, the accommodation coefficient of the system was calculated. The calculation depicts the decrease of accommodation coefficient with increasing temperature. The results agree with experimental data
  • Keywords
    IV-VI semiconductors; cadmium compounds; lead compounds; molecule-surface impact; semiconductor epitaxial layers; sorption; Pb1-xCdxS accommodation coefficient calculation; PbCdS; PbCdS films; accommodation coefficient; hot wall epitaxy; molecule surface interaction; temperature dependence; Atomic measurements; Epitaxial growth; Equations; Frequency; Lattices; Microelectronics; Notice of Violation; Solids; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    964-360-057-2
  • Type

    conf

  • DOI
    10.1109/ICM.2000.916432
  • Filename
    916432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3037590