• DocumentCode
    3038030
  • Title

    Effect of front hole channel on leakage characteristics of a-Si:H TFTs

  • Author

    Servati, Peyman ; Nathan, Arokia ; Sazonov, Andrei

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    247
  • Lastpage
    250
  • Abstract
    This paper explores, from a theoretical standpoint, the effect of a front hole channel formed by virtue of a negative voltage applied at the gate contact, on leakage characteristics of hydrogenated amorphous silicon (a-Si:H) inverted staggered thin-film transistors (TFTs). Holes are accumulated at the front a-Si:H/a-SiNx:H interface forming a channel, which establishes a conduction path between drain and source when the transistor is in its off-state (VGS<0). The accumulation of holes screens the vertical electric field induced by the gate contact. This screening effect explains the voltage and geometry dependence of the leakage characteristics of the TFT
  • Keywords
    amorphous semiconductors; electrical contacts; elemental semiconductors; hole density; hole mobility; hydrogen; leakage currents; semiconductor device models; silicon; thin film transistors; Si:H-SiN:H; a-Si:H TFTs; a-Si:H inverted staggered TFTs; channel formation; drain-source conduction path; front a-Si:H/a-SiNx:H interface; front hole channel; front hole channel effect; gate contact; gate contact negative voltage; geometry dependence; hole accumulation; hydrogenated amorphous silicon inverted staggered thin-film transistors; inverted staggered thin-film transistors; leakage characteristics; screening effect; transistor off-state; vertical electric field; voltage dependence; Active matrix liquid crystal displays; Amorphous silicon; Conductivity; Contacts; Fabrication; Leakage current; Switches; Switching circuits; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    964-360-057-2
  • Type

    conf

  • DOI
    10.1109/ICM.2000.916454
  • Filename
    916454