A Si bipolar 28 GHz dynamic frequency divider

Author

Kurisu, M. ; Uemaru, G. ; Ohuchi, M. ; Ogawa, C. ; Takemura, H. ; Morikawa, T. ; Tashiro, T.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1992

fDate

19-21 Feb. 1992

Firstpage

92

Lastpage

93

Abstract

Reports a silicon bipolar 1/16 dynamic frequency divider operating at 12-28 GHz. A block diagram of the 1/16 frequency divider is shown. To improve high-frequency performance of the Gilbert multiplier, inductors are introduced in series with load resistors, (inductive load). Possible realizations for the inductive load are shown. The frequency divider is fabricated by an advanced borosilicate-glass self-aligned process technology with a cutoff frequency of 40 GHz. Input and output waveforms at maximum input frequency (28.1 GHz) are shown. This dynamic frequency divider is a suitable prescaler for phase-locked oscillators in microwave and satellite communication systems.<>

Keywords

bipolar integrated circuits; frequency dividers; integrated circuit technology; multiplying circuits; phase-locked loops; 12 to 28 GHz; 40 GHz; Gilbert multiplier; Si; bipolar IC; cutoff frequency; dynamic frequency divider; input waveforms; load resistors; microwave links; output waveforms; phase-locked oscillators; prescaler; satellite communication systems; self-aligned process technology; Circuits; Coplanar transmission lines; Dielectric substrates; Frequency conversion; Inductors; Large scale integration; National electric code; Resistors; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-0573-6

Type

conf

DOI

10.1109/ISSCC.1992.200426

Filename

200426