DocumentCode
3039016
Title
Understanding temperature acceleration for NBTI
Author
Pobegen, Gregor ; Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor
Author_Institution
KAI GmbH, Villach, Austria
fYear
2011
fDate
5-7 Dec. 2011
Abstract
Based on experimentally observed temperature-dependent charge exchange during NBTI, which is consistent with nonradiative multiphonon processes, we propose a new concept to understand degradation data at different temperatures. We show the impact of temperature-acceleration on both degradation and recovery, making it possible to perform long-term NBTI tests in a fraction of the time usually required.
Keywords
charge exchange; phonon-phonon interactions; semiconductor device measurement; temperature measurement; NBTI; degradation data; nonradiative multiphonon processes; temperature acceleration; temperature-dependent charge exchange; Acceleration; Degradation; Plasma temperature; Reliability; Stress; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131623
Filename
6131623
Link To Document