A novel low-temperature process for high dielectric constant BST thin films for ULSI DRAM applications

Author

Khamankar, R. ; Jiang, B. ; Tsu, R. ; Hsu, W.-Y. ; Nulman, J. ; Summerfelt, S. ; Anthony, M. ; Lee, J.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1995

fDate

6-8 June 1995

Firstpage

127

Lastpage

128

Abstract

BST (BaSrTiO/sub 3/) thin films are being widely studied as alternative dielectrics for ULSI DRAM storage capacitors. An important issue involved in the use of these films is related to the process integration with silicon technology. For example the high temperatures at which the films are typically deposited and/or annealed is one of the major concerns. In this paper we demonstrate, for the first time, a new technology whereby high quality BaSrTiO/sub 3/ films are obtained at a temperature as low as 460/spl deg/C without any post deposition anneals. Excellent resistance to electrical stress and post-deposition processing steps are also demonstrated.

Keywords

DRAM chips; ULSI; barium compounds; capacitors; dielectric thin films; integrated circuit technology; permittivity; strontium compounds; 460 degC; BaSrTiO/sub 3/; DRAM applications; ULSI; dielectric constant; dielectric thin films; electrical stress resistance; low-temperature process; post-deposition processing steps; process integration; storage capacitors; Annealing; Binary search trees; Capacitors; Dielectric thin films; High-K gate dielectrics; Random access memory; Semiconductor films; Silicon; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520890

Filename

520890