DocumentCode
3039635
Title
Experimental demonstration and analysis of DNA passage in nanopore-based nanofluidic transistors
Author
Paik, Kee-Hyun ; Liu, Yang ; Tabard-Cossa, Vincent ; Huber, David E. ; Provine, J. ; Howe, Roger T. ; Davis, Ronald W. ; Dutton, Robert W.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We investigate DNA passage through a nanofluidic transistor (NFT) composed of large diameter nanopores (~200nm) with an embedded metal gate. The nanopores are large enough to be made by currently available photolithography process for manufacturability. We observe that the NFT is capable of electrostatic control of DNA capture rate, the equivalent of current in the electron transistor, with similar operating principle as their electron device counterpart.
Keywords
DNA; MOSFET; electrostatics; nanofluidics; photolithography; DNA capture rate; DNA passage; electron transistor; electrostatic control; embedded metal gate; large diameter nanopores; nanopore-based nanofluidic transistors; photolithography; Aluminum oxide; Arrays; DNA; Electrodes; Fluids; Logic gates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131646
Filename
6131646
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