Multi-level 40nm WOX resistive memory with excellent reliability

Author

Chien, Wei-Chih ; Lee, Ming-Hsiu ; Feng-Ming Lee ; Lin, Yu-Yu ; Lung, Hsiang-Lan ; Hsieh, Kuang-Yeu ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

40nm WO_X ReRAM has several unique characteristics that are very favorable for MLC application. (1) Although the resistance has strong temperature dependence (as for all ReRAM´s) the J-V characteristics can be accurately described, thus all MLC levels are easily modeled. (2) The device is immune to over-erase, thus allow fast MLC programming. (3) The programming is self-converging (as Flash memories) and is independent of history. Thus an algorithm similar to ISPP (Incremental Step Pulse Programming), commonly used by MLC NAND flash, is designed to achieve accurate MLC states. Consequently, fast 50ns switching, 2-bit/cell and 3-bit/cell MLC states with good cycling characteristics and low read disturbance (>; 10¹⁰) is achieved.

Keywords

CMOS memory circuits; NAND circuits; flash memories; integrated circuit reliability; random-access storage; tungsten compounds; ISPP; J-V characteristic; MLC NAND flash; MLC application; MLC programming; WO_x; incremental step pulse programming; multilevel ReRAM; multilevel resistive memory; size 40 nm; time 50 ns; Flash memory; Mathematical model; Programming; Resistance; Switches; Temperature; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131651

Filename

6131651