DocumentCode
3039911
Title
Effect of gate structures on ESD characteristics in SOI MOS device
Author
Yujuan He ; Hongwei Luo ; Qingzhong Xiao
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear
2013
fDate
15-19 July 2013
Firstpage
745
Lastpage
748
Abstract
The ESD characteristic of SOI NMOSFET with different gate structures was studied. It was indicated that the ESD robustness ability was the strongest in gate around source (GAS) structure and was the weakest in enclosed gate structure in SOI NMOSFET. This was probably related to interested areas and current density.
Keywords
MOSFET; current density; electrostatic discharge; silicon-on-insulator; ESD characteristics; ESD robustness ability; GAS structure; SOI MOS device; SOI NMOSFET; Si; current density; gate around source structure; Electrostatic discharges; Heating; Indexes; Logic gates; MOSFET circuits; RNA; Reliability; ESD protection; GGNMOS; SOI; TLP test;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599268
Filename
6599268
Link To Document