Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

Author

Mohata, D.K. ; Bijesh, R. ; Mujumdar, S. ; Eaton, C. ; Engel-Herbert, R. ; Mayer, T. ; Narayanan, V. ; Fastenau, J.M. ; Loubychev, D. ; Liu, A.K. ; Datta, S.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

2011

fDate

5-7 Dec. 2011

Abstract

Type II arsenide/antimonide compound semiconductor with highly staggered GaAs_0.35Sb_0.65/In_0.7Ga_0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I_ON) of 190μA/μm and 100μA/μm at V_DS=0.75V and 0.3V, respectively (L_G=150nm). In_xGa_1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs_0.5Sb_0.5/In_0.53Ga_0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.

Keywords

MOSFET; elemental semiconductors; gallium arsenide; indium compounds; logic circuits; silicon; tunnel transistors; GaAs_0.35Sb_0.65-In_0.7Ga_0.3As; GaAs_0.5Sb_0.5-In_0.53Ga_0.47As; MOSFET; MOSFET-like on-current performance; Si; heteroTFET; heterotunnel FET; homojunction TFET; logic application; size 40 nm; staggered heterojunction; voltage 0.75 V; voltage 300 mV; Current measurement; FETs; Indium phosphide; Lattices; Logic gates; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131665

Filename

6131665