MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Author

Mukherjee, N. ; Boardman, J. ; Chu-Kung, B. ; Dewey, G. ; Eisenbach, A. ; Fastenau, J. ; Kavalieros, J. ; Liu, W.K. ; Lubyshev, D. ; Metz, M. ; Millard, K. ; Radosavljevic, M. ; Stewart, T. ; Then, H.W. ; Tolchinsky, P. ; Chau, R.

Author_Institution

Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA

fYear

2011

fDate

5-7 Dec. 2011

Abstract

This research work demonstrates, for the first time, that the material quality of MOVPE III-V QWFET structures on Si can be matched to that of the best MBE III-V QWFET structures on Si. The MOVPE grown In_0.53Ga_0.47As QW layer on Si exhibits high Hall mobility of ~8000cm²/V-s at 300K, matching that obtained by MBE growth on lattice matched InP (the “gold standard”).

Keywords

Hall mobility; III-V semiconductors; MOCVD; field effect transistors; substrates; vapour phase epitaxial growth; Hall mobility; MBE III-V QWFET structures; MOVPE III-V QWFET structures; MOVPE III-V material growth; low power logic application; material quality; silicon substrates; Epitaxial layers; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131675

Filename

6131675