Lateral bipolar transistor fabricated on a deep-submicron technology

Author

Gómez, R. ; Neudeck, G.W. ; Bashir, R.

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1999

fDate

1999

Firstpage

37

Lastpage

42

Abstract

The performance of a NPN Lateral Bipolar Transistor (LBJT), based on a minimally modified submicron MOSFET without gate oxide, was studied by means of simulations and measurements on fabricated devices. Large-tilt angle, single-sided implants were successfully used to control the breakdown voltage by tailoring the asymmetric collector doping profile in a self-aligned way. Because of the lack of carrier confinement in the base of devices built on bulk silicon the common emitter current gain is lower than one. Two options for solving this problem were studied using simulators: Building the LBJT on Silicon-On-Insulator (SOI) or introducing SiGe into the base. This project was developed in close cooperation with National Semiconductor Corp., Santa Clara, California

Keywords

bipolar transistors; doping profiles; ion implantation; semiconductor device breakdown; SOI substrate; SiGe base; breakdown voltage; deep-submicron technology; doping profile; ion implantation; lateral bipolar transistor; self-aligned fabrication; Bipolar transistors; CMOS integrated circuits; CMOS process; Contamination; Fabrication; Implants; MOSFET circuits; Ohmic contacts; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-5240-8

Type

conf

DOI

10.1109/UGIM.1999.782818

Filename

782818