Effect of Growth Temperature of the Confinement Layer on Cathodoluminescence Properties of GaSb/GaAs Quantum Dot Multilayer Structures

Author

Drozdowicz-Tomsia, K. ; Goldys, Ewa M. ; Motlan

Author_Institution

Phys. Dept., Macquarie Univ., North Ryde, NSW

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

5

Lastpage

8

Abstract

Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers

Keywords

III-V semiconductors; MOCVD; cathodoluminescence; gallium arsenide; optical multilayers; semiconductor growth; semiconductor quantum dots; GaAs substrates; GaSb-GaAs; GaSb/GaAs quantum dot multilayer; MOCVD; atmospheric pressure metalorganic chemical deposition; cathodoluminescence; growth temperature; wetting layer; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; MOCVD; Nonhomogeneous media; Physics; Quantum dots; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577478

Filename

1577478